Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 149
... SiO2 films ( SiOF ) was found to be dependent on F content and the type of substrate upon which the film was deposited . SiOF films with a range of F concentrations were deposited using an electron cyclotron resonance ( ECR ) plasma ...
... SiO2 films ( SiOF ) was found to be dependent on F content and the type of substrate upon which the film was deposited . SiOF films with a range of F concentrations were deposited using an electron cyclotron resonance ( ECR ) plasma ...
Page 168
... films 1um Fig . 6. SEM image of gap - filling properties of a a - C : F film grown from C4Fg . ( space : 0.35 μm ... SiO2 film on a - C : F films etching time [ min . ] O2 / SiH4 : 100 % O2 / SiH4 : 200 % 96 108 108 Si2p 96 Si2p For ...
... films 1um Fig . 6. SEM image of gap - filling properties of a a - C : F film grown from C4Fg . ( space : 0.35 μm ... SiO2 film on a - C : F films etching time [ min . ] O2 / SiH4 : 100 % O2 / SiH4 : 200 % 96 108 108 Si2p 96 Si2p For ...
Page 170
... film , a SiO2 film , and an adhesion layer ( a - C : H and Si - rich SiO2 ) . of the SiO2 film will fully protect the a - C : F film . SUMMARY The thermal stability and deposition rate of a - C : F films can be increased by using a C4F8 ...
... film , a SiO2 film , and an adhesion layer ( a - C : H and Si - rich SiO2 ) . of the SiO2 film will fully protect the a - C : F film . SUMMARY The thermal stability and deposition rate of a - C : F films can be increased by using a C4F8 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber