Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 32
... Symp . Proc . , 381 , p . 45 ( 1995 ) . 4 . K. Endo , T. Tatsumi , J. Appl . Phys . , 78 ( 2 ) , pp . 1370-1372 ( 1995 ) . 5 . H. Kondo , R. Shinohara , and M. Yamada , Mat . Res . Soc . Symp . Proc . , 381 , p . 105 ( 1995 ) . 6 . 7 ...
... Symp . Proc . , 381 , p . 45 ( 1995 ) . 4 . K. Endo , T. Tatsumi , J. Appl . Phys . , 78 ( 2 ) , pp . 1370-1372 ( 1995 ) . 5 . H. Kondo , R. Shinohara , and M. Yamada , Mat . Res . Soc . Symp . Proc . , 381 , p . 105 ( 1995 ) . 6 . 7 ...
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... Symp . Proc . 337 , 25 ( 1994 ) . 4. P. Singer , Semiconductor International , 88 ( May 1996 ) . 5. ( a ) J. Y. Chee , J. S. Draye , S. Gupta , R. Hopkins , and J. Wiesner , Proc . VIMC Conference , 128 ( 1993 ) ; ( b ) N. P. Hacker ...
... Symp . Proc . 337 , 25 ( 1994 ) . 4. P. Singer , Semiconductor International , 88 ( May 1996 ) . 5. ( a ) J. Y. Chee , J. S. Draye , S. Gupta , R. Hopkins , and J. Wiesner , Proc . VIMC Conference , 128 ( 1993 ) ; ( b ) N. P. Hacker ...
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... Symp . , p.163 ( 1993 ) . 6. H. Miyajima , R. Katsumata , N. Hayasaka , H. Okano , Proc . 16th Dry Process Symp . , p.133 ( 1994 ) . 7. M. Sawada , T. Shirafuji , Y. Hayashi , Tech . Rep . IEICE SDM95-179 , 35 ( 1995 ) . [ in Japanese ] ...
... Symp . , p.163 ( 1993 ) . 6. H. Miyajima , R. Katsumata , N. Hayasaka , H. Okano , Proc . 16th Dry Process Symp . , p.133 ( 1994 ) . 7. M. Sawada , T. Shirafuji , Y. Hayashi , Tech . Rep . IEICE SDM95-179 , 35 ( 1995 ) . [ in Japanese ] ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films