Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 63
... Table 2 show the structures and molar masses of the polymers 1513 CF3 F3G + ( H3C ) 3SiO 2a : para 2b : meta CF 3 CSF , -FSi ( CH3 ) 3 80 ° C , NMP [ voro.o ] 15 -OSi ( CH3 ) 3 Scheme 5 : Structures of the polymers 15 derived from ...
... Table 2 show the structures and molar masses of the polymers 1513 CF3 F3G + ( H3C ) 3SiO 2a : para 2b : meta CF 3 CSF , -FSi ( CH3 ) 3 80 ° C , NMP [ voro.o ] 15 -OSi ( CH3 ) 3 Scheme 5 : Structures of the polymers 15 derived from ...
Page 66
... Table 6 : Glass transition temperaturesa ) of the polymers 16 16d 16e 195 200 150 195 16c 16f 16g 16h 150 195 Table 6 : Glass transition temperaturesa ) of the polymers 16 ( continued ) Polymer No. Ta / ° C 16i 16i 16k 16m 16n 16p 16q ...
... Table 6 : Glass transition temperaturesa ) of the polymers 16 16d 16e 195 200 150 195 16c 16f 16g 16h 150 195 Table 6 : Glass transition temperaturesa ) of the polymers 16 ( continued ) Polymer No. Ta / ° C 16i 16i 16k 16m 16n 16p 16q ...
Page 180
Table IV lists the feature height at A , B and C ( from Figure 2 ) for each material . Table IV . Long Range Planarization A B C metal + polymer polymer metal + polymer height ( A ) height ( A ) height ( A ) BCB PFCB 10,934 8540 10,812 ...
Table IV lists the feature height at A , B and C ( from Figure 2 ) for each material . Table IV . Long Range Planarization A B C metal + polymer polymer metal + polymer height ( A ) height ( A ) height ( A ) BCB PFCB 10,934 8540 10,812 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber