Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 80
... Teflon PTFE , and spin - deposited ( SD ) Teflon AF1600 . Both sputtering and plasma polymerization of fluoropolymers were performed in an RF plasma system operating at 13.56 MHz and at a pressure of 20-40 mTorr . In the case of SP ...
... Teflon PTFE , and spin - deposited ( SD ) Teflon AF1600 . Both sputtering and plasma polymerization of fluoropolymers were performed in an RF plasma system operating at 13.56 MHz and at a pressure of 20-40 mTorr . In the case of SP ...
Page 82
... Teflon AF1600 [ 10 ] . In the present case the increase of tand with temperature for the SP films ( Fig . 2b ) can ... Teflon 1.86 1.82 1 KHz - 2 KHz --4 KHR -10 KHz → 20 KHz → 40 KHz 1.78 100 KHz 0 50 100 150 200 Temperature ( C ) ( b ) ...
... Teflon AF1600 [ 10 ] . In the present case the increase of tand with temperature for the SP films ( Fig . 2b ) can ... Teflon 1.86 1.82 1 KHz - 2 KHz --4 KHR -10 KHz → 20 KHz → 40 KHz 1.78 100 KHz 0 50 100 150 200 Temperature ( C ) ( b ) ...
Page 83
... Teflon AF 1600 on Si 4000 3500 3000 2500 2000 1500 1000 500 Wavenumbers ( cm ) molecules contributing a symptomatic peak around 2400 cm1 . 0 ° XPS survey scans at ( perpendicular ) , 35 ° and 70 ° take - off angles were made for both ...
... Teflon AF 1600 on Si 4000 3500 3000 2500 2000 1500 1000 500 Wavenumbers ( cm ) molecules contributing a symptomatic peak around 2400 cm1 . 0 ° XPS survey scans at ( perpendicular ) , 35 ° and 70 ° take - off angles were made for both ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber