Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 80
... Teflon PTFE , and spin - deposited ( SD ) Teflon AF1600 . Both sputtering and plasma polymerization of fluoropolymers were performed in an RF plasma system operating at 13.56 MHz and at a pressure of 20-40 mTorr . In the case of SP ...
... Teflon PTFE , and spin - deposited ( SD ) Teflon AF1600 . Both sputtering and plasma polymerization of fluoropolymers were performed in an RF plasma system operating at 13.56 MHz and at a pressure of 20-40 mTorr . In the case of SP ...
Page 82
... Teflon AF1600 [ 10 ] . In the present case the increase of tand with temperature for the SP films ( Fig . 2b ) can ... Teflon 1.86 1.82 1 KHz - 2 KHz --4 KHR -10 KHz → 20 KHz → 40 KHz 1.78 100 KHz 0 50 100 150 200 Temperature ( C ) ( b ) ...
... Teflon AF1600 [ 10 ] . In the present case the increase of tand with temperature for the SP films ( Fig . 2b ) can ... Teflon 1.86 1.82 1 KHz - 2 KHz --4 KHR -10 KHz → 20 KHz → 40 KHz 1.78 100 KHz 0 50 100 150 200 Temperature ( C ) ( b ) ...
Page 83
... Teflon AF 1600 on Si 4000 3500 3000 2500 2000 1500 1000 500 Wavenumbers ( cm ) molecules contributing a symptomatic peak around 2400 cm1 . 0 ° XPS survey scans at ( perpendicular ) , 35 ° and 70 ° take - off angles were made for both ...
... Teflon AF 1600 on Si 4000 3500 3000 2500 2000 1500 1000 500 Wavenumbers ( cm ) molecules contributing a symptomatic peak around 2400 cm1 . 0 ° XPS survey scans at ( perpendicular ) , 35 ° and 70 ° take - off angles were made for both ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films