Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 155
... ULSI circuits results in increased resistance of the BEOL metallization and increased interlevel and intralevel capacitances , thus increasing the signal delays . In order to improve the switching performances of future ULSI circuits ...
... ULSI circuits results in increased resistance of the BEOL metallization and increased interlevel and intralevel capacitances , thus increasing the signal delays . In order to improve the switching performances of future ULSI circuits ...
Page 165
... ULSI Device Development Laboratories , NEC Corporation , 1120 Shimokuzawa , Sagamihara , Kanagawa 229 , JAPAN ... ( ULSI ) circuits . Recently , though , the shrinking design rule of ULSI circuits has led to increased interconnection delay ...
... ULSI Device Development Laboratories , NEC Corporation , 1120 Shimokuzawa , Sagamihara , Kanagawa 229 , JAPAN ... ( ULSI ) circuits . Recently , though , the shrinking design rule of ULSI circuits has led to increased interconnection delay ...
Page 200
... ULSI Multilevel Interconnect Conference , ed . by T. Wade , pp . 297ff , 1995 [ 3 ] M. Mills , M. Dibbs , S. Martin , and P. Townsend , in Proceedings of the 1. Dielectrics for VLSI / ULSI Multilevel Interconnect Conference , ed . by T ...
... ULSI Multilevel Interconnect Conference , ed . by T. Wade , pp . 297ff , 1995 [ 3 ] M. Mills , M. Dibbs , S. Martin , and P. Townsend , in Proceedings of the 1. Dielectrics for VLSI / ULSI Multilevel Interconnect Conference , ed . by T ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber