Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page x
... Volume 421- Compound Semiconductor Electronics and Photonics , R.J. Shul , S.J. Pearton , F. Ren , C - S . Wu , 1996 , ISBN : 1-55899-324 - X Volume 422- Rare - Earth Doped Semiconductors II , S. Coffa , A. Polman , R.N. Schwartz , 1996 ...
... Volume 421- Compound Semiconductor Electronics and Photonics , R.J. Shul , S.J. Pearton , F. Ren , C - S . Wu , 1996 , ISBN : 1-55899-324 - X Volume 422- Rare - Earth Doped Semiconductors II , S. Coffa , A. Polman , R.N. Schwartz , 1996 ...
Page xi
... Volume 445- Electronic Packaging Materials Science IX , P.S. Ho , S.K. Groothuis , K. Ishida , T. Wu , 1997 , ISBN : 1-55899-349-5 Volume 446— Amorphous and Crystalline Insulating Thin Films - 1996 , W.L. Warren , J. Kanicki , R.A.B. ...
... Volume 445- Electronic Packaging Materials Science IX , P.S. Ho , S.K. Groothuis , K. Ishida , T. Wu , 1997 , ISBN : 1-55899-349-5 Volume 446— Amorphous and Crystalline Insulating Thin Films - 1996 , W.L. Warren , J. Kanicki , R.A.B. ...
Page 67
... volume . In general , an increase in free volume can be expected to cause a drop in T , since there is more room for cooperative chain motions , and less thermal energy is required to start segment movements . Second , the substituent ...
... volume . In general , an increase in free volume can be expected to cause a drop in T , since there is more room for cooperative chain motions , and less thermal energy is required to start segment movements . Second , the substituent ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films