Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 111
... absorption spectra provide the basis modeling the molecular structure of these alloys . Contributions of electronic and vibrational transitions to Es are discussed in terms of an empirical chemical bonding model . Ab initio calculations ...
... absorption spectra provide the basis modeling the molecular structure of these alloys . Contributions of electronic and vibrational transitions to Es are discussed in terms of an empirical chemical bonding model . Ab initio calculations ...
Page 122
... absorption when exposed to moisture atmosphere . Therefore , the surface oxidation and densification due to the O2 plasma treatment seemed to play a major role in making the SiOF films a very attractive material for ULSI's intermetal ...
... absorption when exposed to moisture atmosphere . Therefore , the surface oxidation and densification due to the O2 plasma treatment seemed to play a major role in making the SiOF films a very attractive material for ULSI's intermetal ...
Page 152
... absorption in the SiOF films increases with increasing F content and that the degree of moisture absorption appears to be independent of substrate type . Although the moisture absorption instability of SiOF films seemed only to depend ...
... absorption in the SiOF films increases with increasing F content and that the degree of moisture absorption appears to be independent of substrate type . Although the moisture absorption instability of SiOF films seemed only to depend ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber