Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 11
... addition to possessing higher thermal stability than other low & materials , attributes of nanoporous silica include the ability to tailor the density and porosity ( and thus ɛ ) over a wide range , and the ability to form relatively ...
... addition to possessing higher thermal stability than other low & materials , attributes of nanoporous silica include the ability to tailor the density and porosity ( and thus ɛ ) over a wide range , and the ability to form relatively ...
Page 140
... addition improves film characteristics , which is regarded as the result of strong oxidation of TICS by fluorine containing radicals [ 15,16 ] . Therefore , we have tried O2 addition in order to enhance the oxidation . Figure 8 shows IR ...
... addition improves film characteristics , which is regarded as the result of strong oxidation of TICS by fluorine containing radicals [ 15,16 ] . Therefore , we have tried O2 addition in order to enhance the oxidation . Figure 8 shows IR ...
Page 144
... addition with Si - O stretching , bending and rocking modes , which are characteristic of SiO , ( see Fig . 1 ) . When no CF , was added , the peak area and height of Si - O stretching mode increased slightly with increasing substrate ...
... addition with Si - O stretching , bending and rocking modes , which are characteristic of SiO , ( see Fig . 1 ) . When no CF , was added , the peak area and height of Si - O stretching mode increased slightly with increasing substrate ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films