Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 79
Adhesion of copper to fluoropolymers was studied using scratch and peel tests .
Different thermal treatment techniques were applied to enhance adhesion ,
including preannealing in vacuum or in atmosphere , as well as postannealing in
...
Adhesion of copper to fluoropolymers was studied using scratch and peel tests .
Different thermal treatment techniques were applied to enhance adhesion ,
including preannealing in vacuum or in atmosphere , as well as postannealing in
...
Page 88
Gore has developed a thermal shock test for adhesion . This test was devised to
simulate a worst - case condition in wafer processing . In this test , a silicon wafer
is coated as follows : lum SiO2 , 1 um PTFE , and lum SiO2 . The wafer is then ...
Gore has developed a thermal shock test for adhesion . This test was devised to
simulate a worst - case condition in wafer processing . In this test , a silicon wafer
is coated as follows : lum SiO2 , 1 um PTFE , and lum SiO2 . The wafer is then ...
Page 165
65 um ) with the a - C : F film . To protect the a - C : F film during further
processing , we deposited a SiO2 film to add mechanical strength and resistance
to the oxygen plasma used to remove resist materials . The adhesion between
the a ...
65 um ) with the a - C : F film . To protect the a - C : F film during further
processing , we deposited a SiO2 film to add mechanical strength and resistance
to the oxygen plasma used to remove resist materials . The adhesion between
the a ...
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel