Low-Dielectric Constant Materials II:H. Treichel, A. C. Jones, A. Lagendijk, K. Uram Low-dielectric constant materials are needed to improve the performance and speed of future integrated circuits. In fact, the diversity of contributors to this book is testimony to the global significance of the topic to the future of semiconductor manufacturing. Presentations include those by semiconductor equipment manufacturers and chemical source suppliers, academia from six countries, four government laboratories and five major device manufacturers. Approaches to designing and implementing reduction in dielectric constant for intermetal dielectric materials are featured and range from the evolution of silicon dioxide to fluorinated silicate glass, to the use of inorganic/organic polymers and spin-on-material, to fluorinated diamond-like carbon and nanoporous silica. The book also addresses the practical aspects of the use of low-dielectric constant materials such as chemical mechanical polishing of these materials and optimization of wiring delays in devices utilizing low-k material. |
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Page 111
CHEMICAL BONDING OF FLUORINE ATOMS IN SiOF ALLOYS: MICROSCOPIC
MECHANISMS FOR REDUCTIONS IN THE DIELECTRIC CONSTANT RELATIVE
TO Si02 G. Lucovsky and H. Yang Departments of Physics, Chemistry, ...
CHEMICAL BONDING OF FLUORINE ATOMS IN SiOF ALLOYS: MICROSCOPIC
MECHANISMS FOR REDUCTIONS IN THE DIELECTRIC CONSTANT RELATIVE
TO Si02 G. Lucovsky and H. Yang Departments of Physics, Chemistry, ...
Page 112
There is no definitive spectroscopic evidence for Si-F2 bonding arrangements in
alloys with up to about 12 at.% F in the published literature [4]. In this context,
Hayasaka, et al. in Ref. 4 have suggested that the development of low and high ...
There is no definitive spectroscopic evidence for Si-F2 bonding arrangements in
alloys with up to about 12 at.% F in the published literature [4]. In this context,
Hayasaka, et al. in Ref. 4 have suggested that the development of low and high ...
Page 118
there are relatively large changes in es, (ii) alloy compositions with small
additions of F can be described in terms of a pseudo-binary notation, (SiO2)x(
Si2O3F2)l-x> from which alloy atom and bonding configurations can be
computed; (iii) the ...
there are relatively large changes in es, (ii) alloy compositions with small
additions of F can be described in terms of a pseudo-binary notation, (SiO2)x(
Si2O3F2)l-x> from which alloy atom and bonding configurations can be
computed; (iii) the ...
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Contents
towDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low eR Material Candidate for ULSI | 21 |
Copyright | |
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Common terms and phrases
a-C:F film adhesion alloy ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking CTAC/TEOS cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing indicates integrated interface ISBN low dielectric constant low-k Materials Research Society measured mechanical metal moisture absorption monomers Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene parylene AF-4 peak PECVD PFCB Phys planarization plasma polyimide polyimide film polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance rf power sample semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spectroscopy spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer xerogel