Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 56
... aluminum contacts on a silicon wafer , first coated with the hybrid material and then cured to 400 ° C . Additional aluminum contacts were deposited on the dielectric film after curing . The dielectric constant of a dry film of 20 ...
... aluminum contacts on a silicon wafer , first coated with the hybrid material and then cured to 400 ° C . Additional aluminum contacts were deposited on the dielectric film after curing . The dielectric constant of a dry film of 20 ...
Page 72
... aluminum pan , using a sample pan crimper . A small amount of sample is preferred for obtaining maximum sensitivity and increasing the efficiency of heat transfer from the sample to its thermocouple . Less than 10 mg of the polyamic ...
... aluminum pan , using a sample pan crimper . A small amount of sample is preferred for obtaining maximum sensitivity and increasing the efficiency of heat transfer from the sample to its thermocouple . Less than 10 mg of the polyamic ...
Page 119
... aluminum . However , the high diffusivity of Cu atoms into SiO2 - base interlayer dielectrics causes device failure . [ 7 ] Thus the purpose of this research is to study the effect of post plasma treatment on the moisture absorption and ...
... aluminum . However , the high diffusivity of Cu atoms into SiO2 - base interlayer dielectrics causes device failure . [ 7 ] Thus the purpose of this research is to study the effect of post plasma treatment on the moisture absorption and ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films