Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 56
... aluminum contacts on a silicon wafer , first coated with the hybrid material and then cured to 400 ° C . Additional aluminum contacts were deposited on the dielectric film after curing . The dielectric constant of a dry film of 20 ...
... aluminum contacts on a silicon wafer , first coated with the hybrid material and then cured to 400 ° C . Additional aluminum contacts were deposited on the dielectric film after curing . The dielectric constant of a dry film of 20 ...
Page 72
... aluminum pan , using a sample pan crimper . A small amount of sample is preferred for obtaining maximum sensitivity and increasing the efficiency of heat transfer from the sample to its thermocouple . Less than 10 mg of the polyamic ...
... aluminum pan , using a sample pan crimper . A small amount of sample is preferred for obtaining maximum sensitivity and increasing the efficiency of heat transfer from the sample to its thermocouple . Less than 10 mg of the polyamic ...
Page 119
... aluminum . However , the high diffusivity of Cu atoms into SiO2 - base interlayer dielectrics causes device failure . [ 7 ] Thus the purpose of this research is to study the effect of post plasma treatment on the moisture absorption and ...
... aluminum . However , the high diffusivity of Cu atoms into SiO2 - base interlayer dielectrics causes device failure . [ 7 ] Thus the purpose of this research is to study the effect of post plasma treatment on the moisture absorption and ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber