Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 96
... ambient temperatures , and 5 ) the relative volatility and high diffusion constants of common solvents in air . Even if one is attempting to make low density thin films via supercritical processing , the solvent can Figure 8. Thin film ...
... ambient temperatures , and 5 ) the relative volatility and high diffusion constants of common solvents in air . Even if one is attempting to make low density thin films via supercritical processing , the solvent can Figure 8. Thin film ...
Page 101
... ambient air , it is expected that the dielectric strength is much stronger than that of ambient air . Capacitance - voltage measurements showed that the permittivity of surface modified films was below 2 , depending on porosity , and ...
... ambient air , it is expected that the dielectric strength is much stronger than that of ambient air . Capacitance - voltage measurements showed that the permittivity of surface modified films was below 2 , depending on porosity , and ...
Page 196
... ambient at the final baking step at 350 ° C . Defect - free films with non - uniformities of well less than 1 % / 1o were thus produced . Typical thickness ' after the bake were in the range of 3000-6000Å depending on the maximum spin ...
... ambient at the final baking step at 350 ° C . Defect - free films with non - uniformities of well less than 1 % / 1o were thus produced . Typical thickness ' after the bake were in the range of 3000-6000Å depending on the maximum spin ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber