Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 18
... analysis ( see text ) . DISCUSSION Anisotropy can be determined by comparing absorbances for in- and out - of plane electric fields as referenced to the 1500 cm - 1 vibration that defines the direction of the zigzag unit ( Fig . 4 ) ...
... analysis ( see text ) . DISCUSSION Anisotropy can be determined by comparing absorbances for in- and out - of plane electric fields as referenced to the 1500 cm - 1 vibration that defines the direction of the zigzag unit ( Fig . 4 ) ...
Page 23
... analysis ( ESCA ) and FT- IR analysis . High resolution ESCA spectra were acquired to determine the binding energy and atomic concentration of the elements detected in the survey scans . Monochromatic aluminum x- ray source with 350 ...
... analysis ( ESCA ) and FT- IR analysis . High resolution ESCA spectra were acquired to determine the binding energy and atomic concentration of the elements detected in the survey scans . Monochromatic aluminum x- ray source with 350 ...
Page 26
... analysis ( TGA ) . In the past , efforts have been made to evaluate thermal stability of parylene AF - 4 thick free standing films . 18 17 Chow et al.16 determined thermal stability of 1.2 - 3.5 μm thick parylene AF - 4 films and ...
... analysis ( TGA ) . In the past , efforts have been made to evaluate thermal stability of parylene AF - 4 thick free standing films . 18 17 Chow et al.16 determined thermal stability of 1.2 - 3.5 μm thick parylene AF - 4 films and ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber