Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 15
... anisotropy . The amount of anisotropy is partially determined by the rigidity of the polymer chains with the rigid poly ( p - phenylene biphenyltetracarboximide ) ( BPDA- PPD ) type polyimides displaying more anisotropy than the semi ...
... anisotropy . The amount of anisotropy is partially determined by the rigidity of the polymer chains with the rigid poly ( p - phenylene biphenyltetracarboximide ) ( BPDA- PPD ) type polyimides displaying more anisotropy than the semi ...
Page 18
... Anisotropy can be determined by comparing absorbances for in- and out - of plane electric fields as referenced to the 1500 cm - 1 vibration that defines the direction of the zigzag unit ( Fig . 4 ) . In the analysis below , we assume no ...
... Anisotropy can be determined by comparing absorbances for in- and out - of plane electric fields as referenced to the 1500 cm - 1 vibration that defines the direction of the zigzag unit ( Fig . 4 ) . In the analysis below , we assume no ...
Page 19
... anisotropy can be significantly reduced . CONCLUSIONS We have compared the anisotropy of spin cast and vapor deposited PMDA - ODA polyimide films . In general , spin cast films were found to be more anisotropic than vapor deposited ...
... anisotropy can be significantly reduced . CONCLUSIONS We have compared the anisotropy of spin cast and vapor deposited PMDA - ODA polyimide films . In general , spin cast films were found to be more anisotropic than vapor deposited ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber