Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 83
... annealed at 100 , 150 , 200 , and 250 ° C . The annealing and XPS analyses were performed in - situ . Because the depth probed varies with the cosine of the angle of incidence , this depth could be varied by a factor of 4 between take ...
... annealed at 100 , 150 , 200 , and 250 ° C . The annealing and XPS analyses were performed in - situ . Because the depth probed varies with the cosine of the angle of incidence , this depth could be varied by a factor of 4 between take ...
Page 124
specimen annealed at 700 ° C in Fig . 8. Nevertheless , TiN layer had a good job in inhibiting the Si and F out - diffusion up to the annealing temperature of 600 ° C . as - dep . 01 C1 ΤΗ N1 Cu1 Si1 F1 Si2 500 ° C 01 Ti1 N1 Cu1 F1 Si2 ...
specimen annealed at 700 ° C in Fig . 8. Nevertheless , TiN layer had a good job in inhibiting the Si and F out - diffusion up to the annealing temperature of 600 ° C . as - dep . 01 C1 ΤΗ N1 Cu1 Si1 F1 Si2 500 ° C 01 Ti1 N1 Cu1 F1 Si2 ...
Page 152
... annealed 100 ° C 11 % F -2.3 % 6 % F -0.3 % 11 % F -1.1 % SiOF / TiN / AI / Si SiOF / Al / SiO2 / Si SiOF / AI / Si annealed 200 ° C 11 % F -3.3 % SiOF / Al / SiO2 / Si 2.5 % F SiOF / Al / SiO2 / Si + 1.8 % 11 % F -2.1 % SiOF / AI / Si ...
... annealed 100 ° C 11 % F -2.3 % 6 % F -0.3 % 11 % F -1.1 % SiOF / TiN / AI / Si SiOF / Al / SiO2 / Si SiOF / AI / Si annealed 200 ° C 11 % F -3.3 % SiOF / Al / SiO2 / Si 2.5 % F SiOF / Al / SiO2 / Si + 1.8 % 11 % F -2.1 % SiOF / AI / Si ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber