Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 81
... annealing prior to copper deposition , and " post " indicates annealing after the copper deposition . The abbreviations “ atm ” and “ vac ” indicate , respectively , annealing under the atmosphere or in vacuum . All these treatments ...
... annealing prior to copper deposition , and " post " indicates annealing after the copper deposition . The abbreviations “ atm ” and “ vac ” indicate , respectively , annealing under the atmosphere or in vacuum . All these treatments ...
Page 150
... annealing treatments were performed at 400 ° C , in vacuum ( 2 x 10-6 Torr ) , for 30 min . , unless otherwise noted . Other annealing ambients ( forming gas or Ar ) gave similar results to those found for the vacuum anneals . The annealing ...
... annealing treatments were performed at 400 ° C , in vacuum ( 2 x 10-6 Torr ) , for 30 min . , unless otherwise noted . Other annealing ambients ( forming gas or Ar ) gave similar results to those found for the vacuum anneals . The annealing ...
Page 152
... annealing treatment compared to the same film after both a hydration and annealing treatment , see Table II ( the thick SiOF films behave as hydrated films following 6 mos . exposure to room ambient conditions ) . Little or no change in ...
... annealing treatment compared to the same film after both a hydration and annealing treatment , see Table II ( the thick SiOF films behave as hydrated films following 6 mos . exposure to room ambient conditions ) . Little or no change in ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber