Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page v
... Applications : A Status Report on the Leading Candidates Neil H. Hendricks A Study of Anisotropy of Spin Cast and Vapor - Deposited Polyimide Films Using Internal Reflection Techniques Vladimir Liberman , Vincent Malba , and Anthony F ...
... Applications : A Status Report on the Leading Candidates Neil H. Hendricks A Study of Anisotropy of Spin Cast and Vapor - Deposited Polyimide Films Using Internal Reflection Techniques Vladimir Liberman , Vincent Malba , and Anthony F ...
Page 3
... applications . INTRODUCTION Many workers in the field of low dielectric constant thin films for IC IMD applications have discussed , in qualitative terms , the anticipated impact of substituting low & dielectrics for SiO2 . Recently ...
... applications . INTRODUCTION Many workers in the field of low dielectric constant thin films for IC IMD applications have discussed , in qualitative terms , the anticipated impact of substituting low & dielectrics for SiO2 . Recently ...
Page 77
... Applications , Elsevier , New York , 1989 G.C. Davis , B.A.Heath , and G. Gildenblat , " Polyimides : Synthesis , Chaeracterization , and Applications " , K.L. Mittal , ed . , Plenum Press , New York , vol.2 , 847 ( 1984 ) D. Wilson ...
... Applications , Elsevier , New York , 1989 G.C. Davis , B.A.Heath , and G. Gildenblat , " Polyimides : Synthesis , Chaeracterization , and Applications " , K.L. Mittal , ed . , Plenum Press , New York , vol.2 , 847 ( 1984 ) D. Wilson ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber