Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 23
DEPOSITION CONDITIONS The deposition of Parylene AF - 4 was performed in the deposition ... as 1,1,2,2,9,9,10,10 - octafluoro [ 2,2 ] -paracyclophane by spectroscopic ... deposited Parylene AF - 4 film are given in Figure 3 and Figure 4. The C1 ...
DEPOSITION CONDITIONS The deposition of Parylene AF - 4 was performed in the deposition ... as 1,1,2,2,9,9,10,10 - octafluoro [ 2,2 ] -paracyclophane by spectroscopic ... deposited Parylene AF - 4 film are given in Figure 3 and Figure 4. The C1 ...
Page 140
... as - deposited 0.0 4000 3500 3000 2500 2000 Wavenumber ( cm1 ) Fig.8 IR absorption spectra of the film deposited with O2 dilution . 3.4 Film deposition with O2 addition 410 405 400 395 300 295 290 285 280 Binding energy ( eV ) Fig.9 C ...
... as - deposited 0.0 4000 3500 3000 2500 2000 Wavenumber ( cm1 ) Fig.8 IR absorption spectra of the film deposited with O2 dilution . 3.4 Film deposition with O2 addition 410 405 400 395 300 295 290 285 280 Binding energy ( eV ) Fig.9 C ...
Page 159
... as - deposited DLC films vs dielectric constants : open markers - thickness changes ; solid markers - stresses . A different effect of the deposition power on film stress was observed for the deposition of fluorinated FDLC films . As ...
... as - deposited DLC films vs dielectric constants : open markers - thickness changes ; solid markers - stresses . A different effect of the deposition power on film stress was observed for the deposition of fluorinated FDLC films . As ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films