Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 111
CHEMICAL BONDING OF FLUORINE ATOMS IN SIOF ALLOYS : MICROSCOPIC
MECHANISMS FOR REDUCTIONS IN ... identify inductive effects of SiF bonds on
the properties of Si - O - Si groups that are back - bonded to the Si atom of the ...
CHEMICAL BONDING OF FLUORINE ATOMS IN SIOF ALLOYS : MICROSCOPIC
MECHANISMS FOR REDUCTIONS IN ... identify inductive effects of SiF bonds on
the properties of Si - O - Si groups that are back - bonded to the Si atom of the ...
Page 112
BONDING OF FLUORINE ATOMS IN Si - O - F The local atomic bonding of
univalent atoms and groups in SiO2 has been previously addressed with
emphasis on hydrogen ( H ) atoms and hydroxyl ( OH ) groups . In the F - doped
SiO2 alloys ...
BONDING OF FLUORINE ATOMS IN Si - O - F The local atomic bonding of
univalent atoms and groups in SiO2 has been previously addressed with
emphasis on hydrogen ( H ) atoms and hydroxyl ( OH ) groups . In the F - doped
SiO2 alloys ...
Page 117
As the partial charge of the Si atom increases , the contribution of the vibrational
modes to es decreases . ... Si - F bond to a Si atom that is back - bonded to three
O atoms reduces the IR effective charges of the back - bonded Si - O - Si groups .
As the partial charge of the Si atom increases , the contribution of the vibrational
modes to es decreases . ... Si - F bond to a Si atom that is back - bonded to three
O atoms reduces the IR effective charges of the back - bonded Si - O - Si groups .
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Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A LOW ER Material Candidate for ULSI | 21 |
Copyright | |
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absorption addition adhesion annealing applications atoms bonds capacitance changes characteristics characterized chemical compared composition concentration containing cured decrease density dependence deposition determined dielectric constant discussed drying effect electrical electron etch evaporation exhibit Figure films deposited flow fluorine formed frequency FTIR function glass groups heating higher hydrogen imidization improved increasing indicates integrated interconnect interface layer lines loss lower materials measured mechanical metal mode moisture observed obtained oxide Parylene peak PECVD performed PFCB plasma polyimide polymers precursor prepared presented pressure Proc properties PTFE range ratio reaction reduced relative reported resistance sample sccm shown shows silica silicon similar SiO2 SiOF films Solid solution solvent spectra strength stress structure substrate surface Table Teflon temperature thermal stability thickness thin films transition treatment values Volume wafer weight xerogel