Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 111
... atom of the Si - F group . These calculations provide a theoretical framework for understanding how relatively low concentrations of F atoms produce the significant decreases in Es reported for Si - O - F alloys . INTRODUCTION There is ...
... atom of the Si - F group . These calculations provide a theoretical framework for understanding how relatively low concentrations of F atoms produce the significant decreases in Es reported for Si - O - F alloys . INTRODUCTION There is ...
Page 112
... ATOMS IN Si - O - F The local atomic bonding of univalent atoms and groups in SiO2 has been previously addressed with emphasis on hydrogen ( H ) atoms and hydroxyl ( OH ) groups . In the F - doped SiO2 alloys , F atoms replace the H atoms ...
... ATOMS IN Si - O - F The local atomic bonding of univalent atoms and groups in SiO2 has been previously addressed with emphasis on hydrogen ( H ) atoms and hydroxyl ( OH ) groups . In the F - doped SiO2 alloys , F atoms replace the H atoms ...
Page 117
... atom and F atoms that are appropriate to their respective bonding stretching vibrations ; i.e. , the O atom is displaced in direction parallel a line joining its two Si atom neighbors , and the F atom is displaced along the Si - F bond ...
... atom and F atoms that are appropriate to their respective bonding stretching vibrations ; i.e. , the O atom is displaced in direction parallel a line joining its two Si atom neighbors , and the F atom is displaced along the Si - F bond ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber