Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 111
... atom of the Si - F group . These calculations provide a theoretical framework for understanding how relatively low concentrations of F atoms produce the significant decreases in Es reported for Si - O - F alloys . INTRODUCTION There is ...
... atom of the Si - F group . These calculations provide a theoretical framework for understanding how relatively low concentrations of F atoms produce the significant decreases in Es reported for Si - O - F alloys . INTRODUCTION There is ...
Page 112
... ATOMS IN Si - O - F The local atomic bonding of univalent atoms and groups in SiO2 has been previously addressed with emphasis on hydrogen ( H ) atoms and hydroxyl ( OH ) groups . In the F - doped SiO2 alloys , F atoms replace the H atoms ...
... ATOMS IN Si - O - F The local atomic bonding of univalent atoms and groups in SiO2 has been previously addressed with emphasis on hydrogen ( H ) atoms and hydroxyl ( OH ) groups . In the F - doped SiO2 alloys , F atoms replace the H atoms ...
Page 117
... atom and F atoms that are appropriate to their respective bonding stretching vibrations ; i.e. , the O atom is displaced in direction parallel a line joining its two Si atom neighbors , and the F atom is displaced along the Si - F bond ...
... atom and F atoms that are appropriate to their respective bonding stretching vibrations ; i.e. , the O atom is displaced in direction parallel a line joining its two Si atom neighbors , and the F atom is displaced along the Si - F bond ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films