Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 72
... band from the adjacent bands for more accurate measurements . To correct the reference band , a spectrum of the solvent , NMP , was also subtracted . There was an absorbance due to solvent at 980 cm1 which interferenced with the ...
... band from the adjacent bands for more accurate measurements . To correct the reference band , a spectrum of the solvent , NMP , was also subtracted . There was an absorbance due to solvent at 980 cm1 which interferenced with the ...
Page 74
... bands at 1359 cm1 have been attributed to the C - N stretch in the polyimide . The band at 742 cm1 region has been attributed to deformation of the imide ring or to the imide carbonyl groups . -1 Transmittance ( % ) 3500 3000 2500 2000 ...
... bands at 1359 cm1 have been attributed to the C - N stretch in the polyimide . The band at 742 cm1 region has been attributed to deformation of the imide ring or to the imide carbonyl groups . -1 Transmittance ( % ) 3500 3000 2500 2000 ...
Page 76
... band near 1860 cm in the IR spectra of polyimide . As shown in Fig . 5 , the intensity of the band increases as temperature increases . The maximum intensity is reached between 225 and 275 ° C . The band then began to decrease and ...
... band near 1860 cm in the IR spectra of polyimide . As shown in Fig . 5 , the intensity of the band increases as temperature increases . The maximum intensity is reached between 225 and 275 ° C . The band then began to decrease and ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber