Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 111
... bonds , b ) induction effects whereby Si - F groups produce changes in the Si - O - Si bonds back - bonded to the Si atom of the Si - F group ; and c ) increases in the frequencies of the bond - stretching vibrations of Si - O - Si ...
... bonds , b ) induction effects whereby Si - F groups produce changes in the Si - O - Si bonds back - bonded to the Si atom of the Si - F group ; and c ) increases in the frequencies of the bond - stretching vibrations of Si - O - Si ...
Page 112
... bond - bending scissiors and bond - rocking modes . Based on studies performed in our laboratory into a spectral range extending to 150 cm - 1 , there is no spectroscopic evidence for either of these modes in samples with up to 12.5 at ...
... bond - bending scissiors and bond - rocking modes . Based on studies performed in our laboratory into a spectral range extending to 150 cm - 1 , there is no spectroscopic evidence for either of these modes in samples with up to 12.5 at ...
Page 117
... bond ionicity , and ( ii ) increases in the effective TO frequency with increasing ionicity . The more important factor relates to the decreases in the IR effective charge with increasing bond ionicity . As shown in the next section ...
... bond ionicity , and ( ii ) increases in the effective TO frequency with increasing ionicity . The more important factor relates to the decreases in the IR effective charge with increasing bond ionicity . As shown in the next section ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber