Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 94
... bulk gel experiments are often used to mimic thin film , the timescales and rate - controlling processes that occur in a bulk experiment are quite different . For semiconductor processing , the gel time must be reduced to less than one ...
... bulk gel experiments are often used to mimic thin film , the timescales and rate - controlling processes that occur in a bulk experiment are quite different . For semiconductor processing , the gel time must be reduced to less than one ...
Page 95
... bulk samples because of mixing and thermal / compositional gradient questions . This is why bulk samples which have been catalyzed are studied but the use of ex - situ catalysis for semiconductor processing is not desirable for several ...
... bulk samples because of mixing and thermal / compositional gradient questions . This is why bulk samples which have been catalyzed are studied but the use of ex - situ catalysis for semiconductor processing is not desirable for several ...
Page 162
... bulk Si content of S3 , qualitatively suggesting that the bulk Si is masked by an SiO2 - rich surface layer which is thicker for sample S3 than for S5 and S9 . A quantitative assessment of the thickness of the etching - modified surface ...
... bulk Si content of S3 , qualitatively suggesting that the bulk Si is masked by an SiO2 - rich surface layer which is thicker for sample S3 than for S5 and S9 . A quantitative assessment of the thickness of the etching - modified surface ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber