Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 15
... capacitor measurements with the electric field normal to the film plane . Thermal expansion measurements have been traditionally performed in the direction along the film plane . Recent work has shown that both electrical and thermal ...
... capacitor measurements with the electric field normal to the film plane . Thermal expansion measurements have been traditionally performed in the direction along the film plane . Recent work has shown that both electrical and thermal ...
Page 43
... capacitors . ESCA was used for determining the fluorine : carbon ratio in the film . The quantification of the elements was accomplished by using the atomic sensitivity factors for Physical Electronics Model 5701Lsci ESCA spectrometer ...
... capacitors . ESCA was used for determining the fluorine : carbon ratio in the film . The quantification of the elements was accomplished by using the atomic sensitivity factors for Physical Electronics Model 5701Lsci ESCA spectrometer ...
Page 89
... capacitor structure is shown in Figure 4. For a film with a thickness of 1.08 μm , the breakdown voltage is 171.7 V , yielding a breakdown field of 1.6 MV / cm . These data are in agreement with other sources . The dielectric constant ...
... capacitor structure is shown in Figure 4. For a film with a thickness of 1.08 μm , the breakdown voltage is 171.7 V , yielding a breakdown field of 1.6 MV / cm . These data are in agreement with other sources . The dielectric constant ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber