Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 3
... characteristics needed for integration into standard IC fabrication lines . To date , no material candidate has been shown to satisfy this impressive list of requirements . For some candidates , drawbacks related to material properties ...
... characteristics needed for integration into standard IC fabrication lines . To date , no material candidate has been shown to satisfy this impressive list of requirements . For some candidates , drawbacks related to material properties ...
Page 7
... characteristics . Recently workers at Texas Instruments reported on the process integration of this material as an " embedded " ( encapsulated ) dielectric in a sub - half micron process flow [ 16 ] . The caged hydridosilsesquioxanes ...
... characteristics . Recently workers at Texas Instruments reported on the process integration of this material as an " embedded " ( encapsulated ) dielectric in a sub - half micron process flow [ 16 ] . The caged hydridosilsesquioxanes ...
Page 21
... characteristics have to be met , among the most important are thermal stability above 400 ° C , mechanical stability , and good adhesion to a variety of substrates . Then , a second set of more stringent requirements have to be met ...
... characteristics have to be met , among the most important are thermal stability above 400 ° C , mechanical stability , and good adhesion to a variety of substrates . Then , a second set of more stringent requirements have to be met ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films