Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 36
Page 3
... characteristics needed for integration into standard IC fabrication lines . To date , no material candidate has been shown to satisfy this impressive list of requirements . For some candidates , drawbacks related to material properties ...
... characteristics needed for integration into standard IC fabrication lines . To date , no material candidate has been shown to satisfy this impressive list of requirements . For some candidates , drawbacks related to material properties ...
Page 7
... characteristics . Recently workers at Texas Instruments reported on the process integration of this material as an " embedded " ( encapsulated ) dielectric in a sub - half micron process flow [ 16 ] . The caged hydridosilsesquioxanes ...
... characteristics . Recently workers at Texas Instruments reported on the process integration of this material as an " embedded " ( encapsulated ) dielectric in a sub - half micron process flow [ 16 ] . The caged hydridosilsesquioxanes ...
Page 21
... characteristics have to be met , among the most important are thermal stability above 400 ° C , mechanical stability , and good adhesion to a variety of substrates . Then , a second set of more stringent requirements have to be met ...
... characteristics have to be met , among the most important are thermal stability above 400 ° C , mechanical stability , and good adhesion to a variety of substrates . Then , a second set of more stringent requirements have to be met ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber