Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 3
... circuit delay is dominated by the intrinsic gate delay for metal widths and spacings greater than 0.3 μm , it is largely determined by delays in the metal interconnect for metal features below about 0.2 μm .. The metal interconnect ...
... circuit delay is dominated by the intrinsic gate delay for metal widths and spacings greater than 0.3 μm , it is largely determined by delays in the metal interconnect for metal features below about 0.2 μm .. The metal interconnect ...
Page 119
... circuits would limit operating speed of devices as parasitic resistance and capacitance increase . In advanced logic devices , the stack of interlayer dielectrics has increased to five or six layers . [ 2 ~ 6 ] In sub - half micron ...
... circuits would limit operating speed of devices as parasitic resistance and capacitance increase . In advanced logic devices , the stack of interlayer dielectrics has increased to five or six layers . [ 2 ~ 6 ] In sub - half micron ...
Page 165
... circuits . Recently , though , the shrinking design rule of ULSI circuits has led to increased interconnection delay caused by parasitic capacitance that has become more of a problem than the conventional gate delay . To reduce this ...
... circuits . Recently , though , the shrinking design rule of ULSI circuits has led to increased interconnection delay caused by parasitic capacitance that has become more of a problem than the conventional gate delay . To reduce this ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber