Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 9
... coefficient ( 90 ppm / ° C ) , and fairly low elongation ( 4 % ) , undoubtedly due to the high degree of crosslinking in the structure . The relatively high thermal expansion coefficient in a highly crosslinked polymer demonstrates that ...
... coefficient ( 90 ppm / ° C ) , and fairly low elongation ( 4 % ) , undoubtedly due to the high degree of crosslinking in the structure . The relatively high thermal expansion coefficient in a highly crosslinked polymer demonstrates that ...
Page 59
... coefficient of thermal expansion , me- chanical stability , planarization and mechanical properties are just a few examples . For organic polymers , the thermal stability is one of the most difficult criteria to fulfil . Only a small ...
... coefficient of thermal expansion , me- chanical stability , planarization and mechanical properties are just a few examples . For organic polymers , the thermal stability is one of the most difficult criteria to fulfil . Only a small ...
Page 96
... coefficients between the film and the surrounding atmosphere because of the high spin speeds , 2 ) the film thickness ... coefficient in air . The estimates presented in Figures 8 and 9 are conservative since they ignore evaporative ...
... coefficients between the film and the surrounding atmosphere because of the high spin speeds , 2 ) the film thickness ... coefficient in air . The estimates presented in Figures 8 and 9 are conservative since they ignore evaporative ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber