Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 39
... component of the PFCB network . Previous work with all hydrocarbon networks , such as benzocyclobutene , has not revealed this type of reaction with either Ta or Ti . Therefore , it is interesting to examine the properties of reaction ...
... component of the PFCB network . Previous work with all hydrocarbon networks , such as benzocyclobutene , has not revealed this type of reaction with either Ta or Ti . Therefore , it is interesting to examine the properties of reaction ...
Page 106
... components , i.e. silica species and surfactant , are fixed by the composition of the spin - coating solution . The ultimate porosity in the film is controlled by the non - volatile component composition . The final spin - coating ...
... components , i.e. silica species and surfactant , are fixed by the composition of the spin - coating solution . The ultimate porosity in the film is controlled by the non - volatile component composition . The final spin - coating ...
Page 118
... component of the Si - F bonding . This is the effect which serves to reduce the dynamic effective charge of the Si - O - Si groups when F nearest neighbors are present . REACTION PATHWAYS TO FLUORINE ATOM INCORPORATION There are two ...
... component of the Si - F bonding . This is the effect which serves to reduce the dynamic effective charge of the Si - O - Si groups when F nearest neighbors are present . REACTION PATHWAYS TO FLUORINE ATOM INCORPORATION There are two ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber