Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 172
... compression molded samples . The lack of easily polarizable functionality also reduces the potential for frequency dependent dielectric constants and dissipation factors . Finally , the lack of hydrocarbon groups increases the thermal ...
... compression molded samples . The lack of easily polarizable functionality also reduces the potential for frequency dependent dielectric constants and dissipation factors . Finally , the lack of hydrocarbon groups increases the thermal ...
Page 173
... compression molded samples . The degree of crosslinking can be controlled by factors such as cure temperature and cure length as shown in Figure 3. The long cure times in Figure 3 are due to the lower cure temperature and the E ...
... compression molded samples . The degree of crosslinking can be controlled by factors such as cure temperature and cure length as shown in Figure 3. The long cure times in Figure 3 are due to the lower cure temperature and the E ...
Page 174
... compression molded samples ( 20 mills ) . The crosslinking of PAE - 2 also imparts solvent resistance to solvents such as NMP and cyclohexanone . FTIR studies of oxygen cured samples do not indicate the introduction of any new ...
... compression molded samples ( 20 mills ) . The crosslinking of PAE - 2 also imparts solvent resistance to solvents such as NMP and cyclohexanone . FTIR studies of oxygen cured samples do not indicate the introduction of any new ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber