Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 108
... concentration of cetyltrimethylammonium bromide ( CTAB ) with temperature , Auvray et al . [ 11 ] observed a sequence of transitions from micellar , hexagonal , monoclinic , cubic to lamellar phases . In the micellar phase the d ...
... concentration of cetyltrimethylammonium bromide ( CTAB ) with temperature , Auvray et al . [ 11 ] observed a sequence of transitions from micellar , hexagonal , monoclinic , cubic to lamellar phases . In the micellar phase the d ...
Page 141
... concentration in the bulk . Acceleration voltage is 300V . Figure 12 shows the depth profile of fluorine in the film . As can be seen in the figure , actual fluorine concentration in the bulk is 6-7at . % . Although this value is almost ...
... concentration in the bulk . Acceleration voltage is 300V . Figure 12 shows the depth profile of fluorine in the film . As can be seen in the figure , actual fluorine concentration in the bulk is 6-7at . % . Although this value is almost ...
Page 146
concentration with increasing CF , flow rate , completely disappearing at a CF , flow rate of 150 sccm . Because -OH bonds have a large electric dipole moment , Si - OH groups contribute to the Absorption Coefficient [ μ / m ] 0.1500 ...
concentration with increasing CF , flow rate , completely disappearing at a CF , flow rate of 150 sccm . Because -OH bonds have a large electric dipole moment , Si - OH groups contribute to the Absorption Coefficient [ μ / m ] 0.1500 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber