Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 44
... conductive . refr . index 15 1.5 13 1.3 1.2 100 prcs1 prcs2 prcs3 e prcs4 200 300 400 wafer temperature , C Figure 4 : Refractive index vs. wafer temperature for the four processes . Table 2 : Dielectric constants and ESCA data for the 44.
... conductive . refr . index 15 1.5 13 1.3 1.2 100 prcs1 prcs2 prcs3 e prcs4 200 300 400 wafer temperature , C Figure 4 : Refractive index vs. wafer temperature for the four processes . Table 2 : Dielectric constants and ESCA data for the 44.
Page 98
... conductivity . ACKNOWLEDGMENTS The authors wish to thank W. Ackerman and S. Wallace of NanoPore , R.H. Havemann , C.M. Jin , S. List , J.D. Luttmer , and M. Anthony of Texas Instruments , and support by Nanoglass LLC . Technical ...
... conductivity . ACKNOWLEDGMENTS The authors wish to thank W. Ackerman and S. Wallace of NanoPore , R.H. Havemann , C.M. Jin , S. List , J.D. Luttmer , and M. Anthony of Texas Instruments , and support by Nanoglass LLC . Technical ...
Page 99
... conductivity metals . The use of low - ɛ dielectric films also lowers power consumption and reduces crosstalk [ 1 ] . Unlike high conductivity metals where Cu seems to be the only reasonable choice , there are numerous candidates for ...
... conductivity metals . The use of low - ɛ dielectric films also lowers power consumption and reduces crosstalk [ 1 ] . Unlike high conductivity metals where Cu seems to be the only reasonable choice , there are numerous candidates for ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber