Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 29
Page 105
... containing an ordered assemblage of ≈2 nm diameter pores were synthesized by spin - coating water / ethanol - based solutions containing a silica precursor and surfactant template . In this paper , film deposition conditions are ...
... containing an ordered assemblage of ≈2 nm diameter pores were synthesized by spin - coating water / ethanol - based solutions containing a silica precursor and surfactant template . In this paper , film deposition conditions are ...
Page 161
... containing Si in a ratio of Si / ( Si + C ) = 3 % . It is clear from the Fig . 10 that the thickness of the SiDLC layer decreases strongly with etching time , in accordance with the relatively high S3 etch rates shown in Figure 9 ...
... containing Si in a ratio of Si / ( Si + C ) = 3 % . It is clear from the Fig . 10 that the thickness of the SiDLC layer decreases strongly with etching time , in accordance with the relatively high S3 etch rates shown in Figure 9 ...
Page 163
... containing SiO2 - like film whose thickness increases with etching time . For $ 5 and S9 , O , RIE produces SiO , -rich films whose steady - state thickness remains small . These thin SiO , films very effectively reduce the SiDLC ...
... containing SiO2 - like film whose thickness increases with etching time . For $ 5 and S9 , O , RIE produces SiO , -rich films whose steady - state thickness remains small . These thin SiO , films very effectively reduce the SiDLC ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber