Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Results 1-3 of 9
Page 29
... cooling the stress returns to a tensile value higher than the initial value of the as - deposited film . The second thermal cycle , shown in the bottom graph of Figure 7b , repeats exactly the cooling curve of the first anneal cycle ...
... cooling the stress returns to a tensile value higher than the initial value of the as - deposited film . The second thermal cycle , shown in the bottom graph of Figure 7b , repeats exactly the cooling curve of the first anneal cycle ...
Page 37
... Cooling Figure 2 : Optical micrograph of Ta / PFCB surface after anneal at 350 ° C Loss of Adhesion 50 50 100 150 200 250 300 350 400 Temperature ( ° C ) Figure 3 : Plot of composite wafer curvature vs. Temperature for PFCB / Ta on an ...
... Cooling Figure 2 : Optical micrograph of Ta / PFCB surface after anneal at 350 ° C Loss of Adhesion 50 50 100 150 200 250 300 350 400 Temperature ( ° C ) Figure 3 : Plot of composite wafer curvature vs. Temperature for PFCB / Ta on an ...
Page 53
... cooling the samples to room temperature , the film stresses were measured from the curvature of the wafer at various temperatures using a Flexus apparatus . The tensile stress of cured films drops upon heating and reappears after cooling ...
... cooling the samples to room temperature , the film stresses were measured from the curvature of the wafer at various temperatures using a Flexus apparatus . The tensile stress of cured films drops upon heating and reappears after cooling ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber