Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 178
... cost , cycle time and cost of ownership . Furnace curing cost of ownership is ~ $ 1 / wafer . Some material properties of these polymers are compared in Table II . Table II . Polymer Characteristics fluorinated ? adhesion promoter ...
... cost , cycle time and cost of ownership . Furnace curing cost of ownership is ~ $ 1 / wafer . Some material properties of these polymers are compared in Table II . Table II . Polymer Characteristics fluorinated ? adhesion promoter ...
Page 179
... cost of ownership , increased throughput and process simplification . 10 μη A B BCB A B PFCB TO UM C C Figure 2. Long - range planarization . The upper micrograph in each set is a low magnification shot showing two lines with a 60 μm ...
... cost of ownership , increased throughput and process simplification . 10 μη A B BCB A B PFCB TO UM C C Figure 2. Long - range planarization . The upper micrograph in each set is a low magnification shot showing two lines with a 60 μm ...
Page 186
... cost of increased coupling capacitance . Based on our results and previously published work , the minimum relative dielectric constant for stable FSG films appears to be 3.5 . PECVD SiO2 has a relative dielectric constant of 4.1 - 4.2 ...
... cost of increased coupling capacitance . Based on our results and previously published work , the minimum relative dielectric constant for stable FSG films appears to be 3.5 . PECVD SiO2 has a relative dielectric constant of 4.1 - 4.2 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber