Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 5
Page 178
... cost , cycle time and cost of ownership . Furnace curing cost of ownership is ~ $ 1 / wafer . Some material properties of these polymers are compared in Table II . Table II . Polymer Characteristics fluorinated ? adhesion promoter ...
... cost , cycle time and cost of ownership . Furnace curing cost of ownership is ~ $ 1 / wafer . Some material properties of these polymers are compared in Table II . Table II . Polymer Characteristics fluorinated ? adhesion promoter ...
Page 179
... cost of ownership , increased throughput and process simplification . 10 μη A B BCB A B PFCB TO UM C C Figure 2. Long - range planarization . The upper micrograph in each set is a low magnification shot showing two lines with a 60 μm ...
... cost of ownership , increased throughput and process simplification . 10 μη A B BCB A B PFCB TO UM C C Figure 2. Long - range planarization . The upper micrograph in each set is a low magnification shot showing two lines with a 60 μm ...
Page 186
... cost of increased coupling capacitance . Based on our results and previously published work , the minimum relative dielectric constant for stable FSG films appears to be 3.5 . PECVD SiO2 has a relative dielectric constant of 4.1 - 4.2 ...
... cost of increased coupling capacitance . Based on our results and previously published work , the minimum relative dielectric constant for stable FSG films appears to be 3.5 . PECVD SiO2 has a relative dielectric constant of 4.1 - 4.2 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films