Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 51
... crack - free films . The maximum crack - free thickness is , however , much lower for films containing either deliberate or unintentional defects or films stored under hostile conditions ( under H2O with applied stress ) ( vida infra ) ...
... crack - free films . The maximum crack - free thickness is , however , much lower for films containing either deliberate or unintentional defects or films stored under hostile conditions ( under H2O with applied stress ) ( vida infra ) ...
Page 53
... cracks emanating from the indentation corners which extended through the film to the silicon surface . The crack growth was monitored by optical microscopy . The use of this protocol to study fracture properties of thin films is ...
... cracks emanating from the indentation corners which extended through the film to the silicon surface . The crack growth was monitored by optical microscopy . The use of this protocol to study fracture properties of thin films is ...
Page 56
... Crack growth of fused silica , 23 % PMDA - 3F / PSSQ and Allied 418 under a variety of conditions . Treatment Conditions Material Thickess ( μm ) E Air Water Indent / Water Fused silica Bulk Stable Stable Little stable extension Indent ...
... Crack growth of fused silica , 23 % PMDA - 3F / PSSQ and Allied 418 under a variety of conditions . Treatment Conditions Material Thickess ( μm ) E Air Water Indent / Water Fused silica Bulk Stable Stable Little stable extension Indent ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber