Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 42
... crosslinked , amorphous fluorocarbon films and how that crosslinking affects the thermal , mechanical , and electrical performance of the material . Previous studies of PECVD fluorocarbon films have used CF4 , C4F8 , and CH as reactants ...
... crosslinked , amorphous fluorocarbon films and how that crosslinking affects the thermal , mechanical , and electrical performance of the material . Previous studies of PECVD fluorocarbon films have used CF4 , C4F8 , and CH as reactants ...
Page 173
... Crosslinking of PAE - 2 in 20 % O2 / 80 % N2 Crosslinking of PAE - 2 can be accomplished thermally in the presence of O2 . While the crosslinking of PAE - 2 can be accomplished in air we recommend using a mixture of pure O2 and pure N2 ...
... Crosslinking of PAE - 2 in 20 % O2 / 80 % N2 Crosslinking of PAE - 2 can be accomplished thermally in the presence of O2 . While the crosslinking of PAE - 2 can be accomplished in air we recommend using a mixture of pure O2 and pure N2 ...
Page 174
E ' TENSILE MODULUS dynes cm2 100 10 ° 10 ° 107 OXIDATIVE CROSSLINKING at 350 ° C PAE - 2 4 hours 100 150 200 250 300 350 T ( ° C ) 2 hours I hour 400 450 Figure 3 thickness of the compression molded samples ( 20 mills ) . The crosslinking ...
E ' TENSILE MODULUS dynes cm2 100 10 ° 10 ° 107 OXIDATIVE CROSSLINKING at 350 ° C PAE - 2 4 hours 100 150 200 250 300 350 T ( ° C ) 2 hours I hour 400 450 Figure 3 thickness of the compression molded samples ( 20 mills ) . The crosslinking ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films