Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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... Crystals for Advanced Technologies , T.J. Bunning , S.H. Chen , W. Hawthorne , T. Kajiyama , N. Koide , 1996 , ISBN : 1-55899-328-2 Volume 426— Thin Films for Photovoltaic and Related Device Applications , D. Ginley , A. Catalano , H.W. ...
... Crystals for Advanced Technologies , T.J. Bunning , S.H. Chen , W. Hawthorne , T. Kajiyama , N. Koide , 1996 , ISBN : 1-55899-328-2 Volume 426— Thin Films for Photovoltaic and Related Device Applications , D. Ginley , A. Catalano , H.W. ...
Page 16
... crystal , and a wire grid polarizer . For each spectrum , 300 scans were acquired at 4 cm - 1 resolution . Prior to depositing a film onto the IRE , background spectra were collected at different polarizations with the uncoated IRE ...
... crystal , and a wire grid polarizer . For each spectrum , 300 scans were acquired at 4 cm - 1 resolution . Prior to depositing a film onto the IRE , background spectra were collected at different polarizations with the uncoated IRE ...
Page 17
... crystal surface , the method has a number of drawbacks . First , because of the rigidity of the substrate , good optical contact cannot be obtained in more than one or two points . Furthermore , for a high refractive index substrate ...
... crystal surface , the method has a number of drawbacks . First , because of the rigidity of the substrate , good optical contact cannot be obtained in more than one or two points . Furthermore , for a high refractive index substrate ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films