Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 19
... crystalline regions . The presence of these crystalline regions can be observed from the examination of the asymmetric carbonyl stretch for the VDP films ( Fig . 5 ) . The higher frequency component ( disordered region ) is more ...
... crystalline regions . The presence of these crystalline regions can be observed from the examination of the asymmetric carbonyl stretch for the VDP films ( Fig . 5 ) . The higher frequency component ( disordered region ) is more ...
Page 29
... crystalline melting ( Tm ) due to the presence of crystalline regions . Thus in a semicrystalline polymer , both a T , and a Tm are observed . DSC run was performed at a heating rate of 5 ° C / min from -30 ° C to 510 ° C in an ...
... crystalline melting ( Tm ) due to the presence of crystalline regions . Thus in a semicrystalline polymer , both a T , and a Tm are observed . DSC run was performed at a heating rate of 5 ° C / min from -30 ° C to 510 ° C in an ...
Page 116
... crystalline Si3N4 , 4 , non - crystalline SiO2 , and 5 , extrapolated approximate values for Si203F2 . 3 6 7 Si - o - si B • HeSi207 △ H4Si2F205 bending mode 0.9 1.0 1.1 1.2 rocking mode 0.8 0.9 1.0 2 0.8 0.7 100 120 140 160 180 100 ...
... crystalline Si3N4 , 4 , non - crystalline SiO2 , and 5 , extrapolated approximate values for Si203F2 . 3 6 7 Si - o - si B • HeSi207 △ H4Si2F205 bending mode 0.9 1.0 1.1 1.2 rocking mode 0.8 0.9 1.0 2 0.8 0.7 100 120 140 160 180 100 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films