Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 19
... crystalline regions . The presence of these crystalline regions can be observed from the examination of the asymmetric carbonyl stretch for the VDP films ( Fig . 5 ) . The higher frequency component ( disordered region ) is more ...
... crystalline regions . The presence of these crystalline regions can be observed from the examination of the asymmetric carbonyl stretch for the VDP films ( Fig . 5 ) . The higher frequency component ( disordered region ) is more ...
Page 29
... crystalline melting ( Tm ) due to the presence of crystalline regions . Thus in a semicrystalline polymer , both a T , and a Tm are observed . DSC run was performed at a heating rate of 5 ° C / min from -30 ° C to 510 ° C in an ...
... crystalline melting ( Tm ) due to the presence of crystalline regions . Thus in a semicrystalline polymer , both a T , and a Tm are observed . DSC run was performed at a heating rate of 5 ° C / min from -30 ° C to 510 ° C in an ...
Page 116
... crystalline Si3N4 , 4 , non - crystalline SiO2 , and 5 , extrapolated approximate values for Si203F2 . 3 6 7 Si - o - si B • HeSi207 △ H4Si2F205 bending mode 0.9 1.0 1.1 1.2 rocking mode 0.8 0.9 1.0 2 0.8 0.7 100 120 140 160 180 100 ...
... crystalline Si3N4 , 4 , non - crystalline SiO2 , and 5 , extrapolated approximate values for Si203F2 . 3 6 7 Si - o - si B • HeSi207 △ H4Si2F205 bending mode 0.9 1.0 1.1 1.2 rocking mode 0.8 0.9 1.0 2 0.8 0.7 100 120 140 160 180 100 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber