Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 196
... cured in vertical furnaces at different temperatures between 350 ° C and 850 ° C , thus covering the typical regimes of both back- and front - end - of - line ( BEOL , FEOL ) applications . For all data shown here , the cure ambient was ...
... cured in vertical furnaces at different temperatures between 350 ° C and 850 ° C , thus covering the typical regimes of both back- and front - end - of - line ( BEOL , FEOL ) applications . For all data shown here , the cure ambient was ...
Page 198
... Temperature ( deg File : fan002 . teb 2 hydrogen ( 2 ) 2330 44 20 2990 +4 20 1000.0 Temperature ( deg / © Fig . 5 TDS spectra of films cured ... cure temperature . the dielectric constant reaches a maximum for cure temperatures somewhere 198.
... Temperature ( deg File : fan002 . teb 2 hydrogen ( 2 ) 2330 44 20 2990 +4 20 1000.0 Temperature ( deg / © Fig . 5 TDS spectra of films cured ... cure temperature . the dielectric constant reaches a maximum for cure temperatures somewhere 198.
Page 199
... cured at the lowest temperature Tcure = 350 ° C . The data presented here can be understood within the following model . The well - known cage - like microstructure is fully built - up at the recommended cure temperature of 400 ° C ...
... cured at the lowest temperature Tcure = 350 ° C . The data presented here can be understood within the following model . The well - known cage - like microstructure is fully built - up at the recommended cure temperature of 400 ° C ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber