Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 53
... cured hybrid films were determined using an instrumented nano - indenter . A Berkovich diamond - pyramid triangular indenter was loaded onto the surface of 1 μm thick cured films with a peak load of 2 mN and then unloaded . The ...
... cured hybrid films were determined using an instrumented nano - indenter . A Berkovich diamond - pyramid triangular indenter was loaded onto the surface of 1 μm thick cured films with a peak load of 2 mN and then unloaded . The ...
Page 178
... cured at 400 ° C , for 60 minutes , in forming gas . BCB can be either furnace - cured or hot - plate cured . Since it is subject to thermal oxidative degradation at cure temperatures , the cure must be done in an inert ambient ( < 100 ...
... cured at 400 ° C , for 60 minutes , in forming gas . BCB can be either furnace - cured or hot - plate cured . Since it is subject to thermal oxidative degradation at cure temperatures , the cure must be done in an inert ambient ( < 100 ...
Page 198
... cured at 850 ° C , showed very little hydrogen and no silane , but a water peak at low temperatures . Its origin is not well understood . Since no water was found in the FTIR spectra of as deposited and cured films under these ...
... cured at 850 ° C , showed very little hydrogen and no silane , but a water peak at low temperatures . Its origin is not well understood . Since no water was found in the FTIR spectra of as deposited and cured films under these ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber