Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 51
... cured films of 23 % PMDA - 3F / PSSQ . Films were cured to 400 ° C . Depending on the polyimide content ( 15-23 wt . % ) rather thick films ( 5-15 um ) could be produced from the polyimide / PSSQ hybrid materials . In general , higher ...
... cured films of 23 % PMDA - 3F / PSSQ . Films were cured to 400 ° C . Depending on the polyimide content ( 15-23 wt . % ) rather thick films ( 5-15 um ) could be produced from the polyimide / PSSQ hybrid materials . In general , higher ...
Page 53
... cured films drops upon heating and reappears after cooling to room temperature . For the hybrid materials , the film stresses ranged from 30-42 MPa . This is compared with a value of 47 MPa measured for PMDA - 3F prepared via the poly ...
... cured films drops upon heating and reappears after cooling to room temperature . For the hybrid materials , the film stresses ranged from 30-42 MPa . This is compared with a value of 47 MPa measured for PMDA - 3F prepared via the poly ...
Page 198
... films cured at 400 ° C ( left ) and 600 ° C ( right ) . Distinct difference are observed for hydrogen ( 2 ) , silane ( 29 , 30 ) , and water ( 17 , 18 ) . The temperature on the x - axis scales from 0 ° C to 1000 ° C . 55 50 45 ...
... films cured at 400 ° C ( left ) and 600 ° C ( right ) . Distinct difference are observed for hydrogen ( 2 ) , silane ( 29 , 30 ) , and water ( 17 , 18 ) . The temperature on the x - axis scales from 0 ° C to 1000 ° C . 55 50 45 ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films