Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
From inside the book
Results 1-3 of 6
Page 29
... curve of the first anneal cycle . The second anneal cycle shows no hysteresis . Films deposited using similar deposition conditions show a similar stress vs. temperature behavior . Thermally cycling other samples a third time yields ...
... curve of the first anneal cycle . The second anneal cycle shows no hysteresis . Films deposited using similar deposition conditions show a similar stress vs. temperature behavior . Thermally cycling other samples a third time yields ...
Page 108
... curve is the expected volume fraction based on the volume contributions of the silica and the surfactant in the precursor solution , after taking into account the shrinkage on calcination , which was measured by shifts in the positions ...
... curve is the expected volume fraction based on the volume contributions of the silica and the surfactant in the precursor solution , after taking into account the shrinkage on calcination , which was measured by shifts in the positions ...
Page 122
... curve of the non- treated SiOF film shown in Fig . 5 ( b ) , point A indicates that the non plasma treated SiOF film ... curves of SiOF films with O2 plasma treatment ( a ) and non plasma treatment ( b ) , then followed by boiling ...
... curve of the non- treated SiOF film shown in Fig . 5 ( b ) , point A indicates that the non plasma treated SiOF film ... curves of SiOF films with O2 plasma treatment ( a ) and non plasma treatment ( b ) , then followed by boiling ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
23 other sections not shown
Other editions - View all
Common terms and phrases
1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber