Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 29
... cycle , shown in the bottom graph of Figure 7b , repeats exactly the cooling curve of the first anneal cycle . The second anneal cycle shows no hysteresis . Films deposited using similar deposition conditions show a similar stress vs ...
... cycle , shown in the bottom graph of Figure 7b , repeats exactly the cooling curve of the first anneal cycle . The second anneal cycle shows no hysteresis . Films deposited using similar deposition conditions show a similar stress vs ...
Page 72
... cycle at temperature in the range from 100 ° C to 430 ° C . The FTIR spectra of the sample were recorded . The cycle of sample heating and FTIR measurement was repeated in order to get FTIR spectra as a function of curing temperature ...
... cycle at temperature in the range from 100 ° C to 430 ° C . The FTIR spectra of the sample were recorded . The cycle of sample heating and FTIR measurement was repeated in order to get FTIR spectra as a function of curing temperature ...
Page 193
... cycle , rp , times 1 cycle . The dependence of г , on pulse off time , t1 , is known ( r , = 0.18 ( 1 - e - 1 ) , in nm / cycle ) , 15 and can be substituted in for d . The resulting models have a zero , second , and first order ...
... cycle , rp , times 1 cycle . The dependence of г , on pulse off time , t1 , is known ( r , = 0.18 ( 1 - e - 1 ) , in nm / cycle ) , 15 and can be substituted in for d . The resulting models have a zero , second , and first order ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
Copyright | |
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1997 Materials Research a-C:F film adhesion alloy ambient annealing as-deposited BEOL capacitance chemical chemical vapor deposition concentration crosslinking CTAC/TEOS cured dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content FDLC Figure film thickness films deposited fluorine fluorocarbon FSG films FTIR glass transition temperature HDPCVD hydrogen imidization increasing integrated interface low dielectric constant low-k Materials Research Society measured metal moisture absorption mtorr Multilevel Interconnection nanoporous nanoporous silica O2 plasma oxide Parylene peak PECVD PFCB Phys planarization polyimide polymer pore porosity porous silica precursor Proc properties PTFE reaction reduced refractive index resistance rf power sample sccm semiconductor shows shrinkage Si-O-Si Si-OH Si-rich SiF4 silica films silicon SiO2 SiOF films SiOF layers Solid solvent spectra spin-coating stress structure surface Symp TEOS thermal stability thin films ULSI vapor deposition vibrational wafer Wavenumber