Low-dielectric Constant MaterialsMaterials Research Society, 1996 - Electric insulators and insulation |
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Page 95
... decreases the time required for gelation as shown in Figure 4 but one could also add a catalyst to decrease the gel time as shown in Figure 5. For those experiments , the solids content was maintained at 5 % and no solvent evaporation ...
... decreases the time required for gelation as shown in Figure 4 but one could also add a catalyst to decrease the gel time as shown in Figure 5. For those experiments , the solids content was maintained at 5 % and no solvent evaporation ...
Page 117
... decrease in es from removal of these groups is about than about 6 % of dε = εs - Ɛop ( ≈ 4.1 - 2.1 ≈ 2 ) or ~ 0.12 , whereas the reported decrease in ɛs is at least 0.8 . This zeroth order calculation actually under estimates the ...
... decrease in es from removal of these groups is about than about 6 % of dε = εs - Ɛop ( ≈ 4.1 - 2.1 ≈ 2 ) or ~ 0.12 , whereas the reported decrease in ɛs is at least 0.8 . This zeroth order calculation actually under estimates the ...
Page 145
... decrease in the dielectric constant estimated from the Kramers - Kronig relation was about 0.4-0.5 . Considering that the decrease in dielectric constant due to electronic polarization by CF , addition was 0.1-0.2 , the decrease in ...
... decrease in the dielectric constant estimated from the Kramers - Kronig relation was about 0.4-0.5 . Considering that the decrease in dielectric constant due to electronic polarization by CF , addition was 0.1-0.2 , the decrease in ...
Contents
LowDielectric Constant Materials for IC Intermetal | 3 |
A Study of Anisotropy of Spin Cast and VaporDeposited | 15 |
A Low R Material Candidate for ULSI | 21 |
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1997 Materials Research a-C:F film adhesion ambient annealing applications as-deposited atoms BEOL capacitance chemical concentration crosslinking cure temperature cured films dangling bonds decrease density deposition rate desorption dielectric constant DLC films electron ellipsometry etch rate evaporation F content Figure film thickness films deposited fluorine fluorocarbon fluoropolymers frequency FSG films FTIR glass transition temperature groups HDPCVD hydrogen imidization increasing integrated interface ISBN low dielectric constant low-k Materials Research Society measured metal moisture absorption monomers mtorr Multilevel Interconnection nanoporous nanoporous silica oxazole oxide Parylene Parylene AF-4 peak PECVD PFCB planarization polyimide polymerization polymers porosity precursor Proc properties PTFE ratio reaction refractive index resistance sample sccm semiconductor shows Si-F Si-O-Si SiDLC SiF4 silicon SiO2 SiOF films solvent spectra spin cast spin-coating stress structure substrate surface Symp thermal stability thin films ULSI vapor deposition wafer Wavenumber xerogel xerogel films